Sr. Design Engineer, VLSI Design Engineering

The Memory Technology Group is at the core of the Legacy SanDisk Engineering Organization. We are building a cutting edge 3D memory in our multiple billion dollars Fab. Our memory provides performance, power, and endurance at a lower cost but on quality. The Memory Technology organization is a strategic entity for the company, and we are growing. Our group functions as a start-up within Sandisk, and offers a creative, fast paced, entrepreneurial work environment where you’ll be at the center of Sandisk innovation.

If you thrive in a fast-paced, dynamic environment, are looking to be a part of a team that is developing exciting new processes, and you are eager to take on new opportunities and challenges with a sense of urgency and enthusiasm, then this could be an exciting opportunity for you.

ESSENTIAL DUTIES AND RESPONSIBILITIES: 

• Architect and design circuits at transistor level and gate level for leading-edge 3D NAND flash memory focusing on high-speed datapath circuit design and page buffers. 
• Perform block level and full chip circuit simulations to meet all  performance specifications.
• RTL design, synthesis, static timing analysis and verification in verilog for page buffer and data path control logics. 
• Conduct silicon debugging and evaluation with micro-probing. 
• Collaborate with characterization engineers to fully characterize silicon, and partner with other designers to develop solutions for silicon issues.
• Generate detailed technical reports and presentations.